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Depth dependence of defect evolution and TED during annealing

Lookup NU author(s): Professor Nick Cowern

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Abstract

A quantitative transmission electron microscopy (TEM) study on the depth profile of extended defects, formed after Si implantation, has been carried out. Two different Si+ implant conditions have been considered. TEM analysis for the highest energy/dose shows that {1 1 3} defects evolve into dislocation loops whilst the defect depth distribution remains unchanged as a function of annealing time. For the lowest energy/dose, {1 1 3} defects grow and dissolve while the defect band shrinks preferentially on the surface side. At the same time, extraction of boron transient enhanced diffusion (TED) as a function of depth shows a decrease of the supersaturation towards the surface, starting at the location of the defect band. The study clearly shows that in these systems the silicon surface is the principal sink for interstitials. The results provide a critical test of the ability of physical models to simulate defect evolution and TED.

Publication metadata

Author(s): Colombeau B, Cowern NEB, Cristiano F, Calvo P, Lamrani Y, Cherkashin N, Lampin E, Claverie A

Publication type: Article

Publication status: Published

Journal: Nuclear Instruments and Methods in Physics Research B

Year: 2004

Volume: 216

Pages: 90-94

ISSN (print): 0168-583X

ISSN (electronic): 1872-9584

Publisher: Elsevier BV

URL: http://dx.doi.org/10.1016/j.nimb.2003.11.025

DOI: 10.1016/j.nimb.2003.11.025

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