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Modelling of the chemical-pump effect and C clustering

Lookup NU author(s): Professor Nick Cowern

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Abstract

A complete model of C diffusion and its effect on dopant diffusion has been developed and fitted to experimental data acquired in our previous works, and in the published literature. The role of C clustering in the diffusion behaviour of C and dopant impurities in the presence of very high C concentrations has been modelled. Results on enhanced Sb diffusion in the presence of very high C concentration produced by MBE can be explained on the assumption that a small, but significant, percentage of the C is clustered following epitaxy. For C content below 1 × 1020 cm−3, and for higher concentrations provided the initial level of clustered C is known, our model provides an important predictive capability for the effect of C on dopant diffusion.

Publication metadata

Author(s): Colombeau B, Cowern NEB

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2004

Volume: 19

Issue: 12

Pages: 1339-1342

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0268-1242/19/12/001

DOI: 10.1088/0268-1242/19/12/001

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