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Lookup NU author(s): Professor Nick Cowern
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A complete model of C diffusion and its effect on dopant diffusion has been developed and fitted to experimental data acquired in our previous works, and in the published literature. The role of C clustering in the diffusion behaviour of C and dopant impurities in the presence of very high C concentrations has been modelled. Results on enhanced Sb diffusion in the presence of very high C concentration produced by MBE can be explained on the assumption that a small, but significant, percentage of the C is clustered following epitaxy. For C content below 1 × 1020 cm−3, and for higher concentrations provided the initial level of clustered C is known, our model provides an important predictive capability for the effect of C on dopant diffusion.
Author(s): Colombeau B, Cowern NEB
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd.
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