Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001)

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Author(s): Lu X, McNally PJ, Dilliway GDM, Cowern NEB, Jeynes C, Mendoza E, Ashburn P, Bagnall DM

Publication type: Article

Publication status: Published

Journal: Journal of Materials Science: Materials in Electronics

Year: 2005

Volume: 16

Issue: 7

Pages: 469-474

ISSN (print): 0957-4522

ISSN (electronic): 1573-482X

Publisher: Springer New York LLC

URL: http://dx.doi.org/10.1007/s10854-005-2320-6

DOI: 10.1007/s10854-005-2320-6

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