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Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

Lookup NU author(s): Professor Nick Cowern

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Author(s): Hamilton JJ, Collart EJH, Colombeau B, Jeynes C, Bersani M, Giubertoni D, Sharp JA, Cowern NEB, Kirkb KJ

Publication type: Article

Publication status: Published

Journal: Nuclear Instruments and Methods in Physics Research B

Year: 2005

Volume: 237

Issue: 1-2

Pages: 107-112

ISSN (print): 0168-583X

ISSN (electronic): 1872-9584

Publisher: Elsevier BV

URL: http://dx.doi.org/10.1016/j.nimb.2005.04.112

DOI: 10.1016/j.nimb.2005.04.112

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