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Lookup NU author(s): Professor Nick Cowern
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Diffusion where an impurity ‘jumps’ at random time intervals by converting to a fast-migrating intermediate species, appears to be quite common in semiconductors. The special characteristics of this ‘intermittent’ mode of diffusion are analysed. It is shown how definitive information on the atomic mechanism and energetics of diffusion for a migrant impurity can be obtained from depth profile measurements, provided the measurement length scale is comparable with the migration length of the intermediate species. Recent experiments have provided this basic knowledge for the case of B in Si. Implications for the formation of ultra-shallow junctions are discussed.
Author(s): Cowern NEB, van de Walle GFA
Publication type: Review
Publication status: Published
Journal: Modern Physics Letters B
ISSN (print): 0217-9849
ISSN (electronic): 1793-6640