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Intermittent diffusion and its influence on dopant profiles in semiconductors

Lookup NU author(s): Professor Nick Cowern

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Abstract

Diffusion where an impurity ‘jumps’ at random time intervals by converting to a fast-migrating intermediate species, appears to be quite common in semiconductors. The special characteristics of this ‘intermittent’ mode of diffusion are analysed. It is shown how definitive information on the atomic mechanism and energetics of diffusion for a migrant impurity can be obtained from depth profile measurements, provided the measurement length scale is comparable with the migration length of the intermediate species. Recent experiments have provided this basic knowledge for the case of B in Si. Implications for the formation of ultra-shallow junctions are discussed.

Publication metadata

Author(s): Cowern NEB, van de Walle GFA

Publication type: Review

Publication status: Published

Journal: Modern Physics Letters B

Year: 2007

Volume: 5

Issue: 23

Pages: 1555

ISSN (print): 0217-9849

ISSN (electronic): 1793-6640

URL: http://dx.doi.org/10.1142/S0217984991001854

DOI: 10.1142/S0217984991001854

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