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Lookup NU author(s): Professor Nick Cowern
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Recent experiments have shown that ion pairing has a major influence on the diffusion and precipitation of oppositely charged impurities in silicon. Published data are used to obtain ion pairing coefficients Ω for n‐type impurities with B and In. A single value, Ω=0.17/ni, suffices to describe the cases P‐B, As‐B, and Sb‐B. For P‐In and Sb‐In, Ω is roughly an order of magnitude smaller. These observations are consistent with the picture that paired ions occupy adjacent substitutional sites, with a small perturbation in their Coulomb binding arising from elastic effects.
Author(s): Cowern NEB
Publication type: Article
Publication status: Published
Journal: Applied Physics Letters
Year: 2007
Volume: 54
Issue: 8
Pages: 703
ISSN (print): 0003-6951
ISSN (electronic): 1077-3118
Publisher: American Institute of Physics
URL: http://dx.doi.org/10.1063/1.100868
DOI: 10.1063/1.100868
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