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Ion pairing effects on substitutional impurity diffusion in silicon

Lookup NU author(s): Professor Nick Cowern


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Recent experiments have shown that ion pairing has a major influence on the diffusion and precipitation of oppositely charged impurities in silicon. Published data are used to obtain ion pairing coefficients Ω for n‐type impurities with B and In. A single value, Ω=0.17/ni, suffices to describe the cases P‐B, As‐B, and Sb‐B. For P‐In and Sb‐In, Ω is roughly an order of magnitude smaller. These observations are consistent with the picture that paired ions occupy adjacent substitutional sites, with a small perturbation in their Coulomb binding arising from elastic effects.

Publication metadata

Author(s): Cowern NEB

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2007

Volume: 54

Issue: 8

Pages: 703

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics


DOI: 10.1063/1.100868


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