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Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

Lookup NU author(s): Professor Nick Cowern

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Author(s): Sharp J, Cowern NEB, Webb RP, Kirkby KJ, Giubertoni D, Gennaro S, Bersani M, Foad MA, Cristiano F, Fazzini PF

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2006

Volume: 89

Issue: 19

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2385215

DOI: 10.1063/1.2385215

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