ePrints

Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctions

Lookup NU author(s): Professor Nick Cowern

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Publication metadata

Author(s): Hamilton JJ, Colombeau B, Sharp JA, Cowern NEB, Kirkby KJ, Collart EJH, Bersani M, Giubertoni D

Publication type: Article

Publication status: Published

Journal: Journal of Vacuum Science and Technology B

Year: 2006

Volume: 24

Pages: 442-445

ISSN (print): 1071-1023

ISSN (electronic): 1520-8567

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1116/1.2140004

DOI: 10.1116/1.2140004

Altmetrics

Share