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Lookup NU author(s): Professor Nick Cowern
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We studied the influence of energy and fluence of a F+ implantation on the end-of-range (EOR) defects and on B activation in Ge+-preamorphized Si. After F+ co-implantation at either 10 or 22 keV, B transient-enhanced diffusion as well as B electrical deactivation are both reduced. In contrast, 10 keV F+ implantation does not affect the EOR evolution, while defects are stabilized after 22 keV F+ implantation. Our results, therefore, show that the beneficial effects related to F+ co-implantation cannot be explained in terms of a stabilization of the EOR defects.
Author(s): Boninelli S, Cristiano F, Lerch W, Paul S, Cowern NEB
Publication type: Article
Publication status: Published
Journal: Electrochemical and Solid State Letters
ISSN (print): 1099-0062
ISSN (electronic): 1944-8775
Publisher: Electrochemical Society, Inc.
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