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Influence of F co-implantation on end-of-range defect formation in B+ implanted, ultrashallow junctions

Lookup NU author(s): Professor Nick Cowern

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Abstract

We studied the influence of energy and fluence of a F+ implantation on the end-of-range (EOR) defects and on B activation in Ge+-preamorphized Si. After F+ co-implantation at either 10 or 22 keV, B transient-enhanced diffusion as well as B electrical deactivation are both reduced. In contrast, 10 keV F+ implantation does not affect the EOR evolution, while defects are stabilized after 22 keV F+ implantation. Our results, therefore, show that the beneficial effects related to F+ co-implantation cannot be explained in terms of a stabilization of the EOR defects.

Publication metadata

Author(s): Boninelli S, Cristiano F, Lerch W, Paul S, Cowern NEB

Publication type: Article

Publication status: Published

Journal: Electrochemical and Solid State Letters

Year: 2007

Volume: 10

Issue: 9

Pages: H264-H266

ISSN (print): 1099-0062

ISSN (electronic): 1944-8775

Publisher: Electrochemical Society, Inc.

URL: http://dx.doi.org/10.1149/1.2751837

DOI: 10.1149/1.2751837

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