Toggle Main Menu Toggle Search

Open Access padlockePrints

Stability and composition of Ni-germanosilicided Si/sub 1-x/Ge/sub x/ films

Lookup NU author(s): Dr Sanatan Chattopadhyay


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


The stability and composition of the Ni-germanosilicided films formed on relaxed Si/sub 1-x/Ge/sub x/ alloy has been studied in the temperature range of 400-900 degrees C. During the solid phase thermal reaction between Ni and Si/sub 1-x/Ge/sub x/, a nickel-germanosilicide Ni/sub y/(Si/sub 1-w/Ge/sub w/)/sub 1-y/ ternary phase (w[left angle bracket]or=x and y approximately=0.5) and a Ge-rich Si/sub 1-z/Ge/sub z/ phase (z[right angle bracket]x) have been found. In the lower annealing temperature range of 500 degrees C, the Ge composition in the nickel-germanosilicide phase is similar to that of the Si/sub 0.75/Ge/sub 0.25/ substrate. At the same time, germination of Si/sub 1-z/Ge/sub z/ (z[right angle bracket]x) takes place within the germanosilicide film. At higher annealing temperatures, Ni thermodynamically prefers to react with Si compared to Ge, and as a result, Ge segregates out from the germanosilicide grains to enrich Ge in the formed Si/sub 1-z/Ge/sub z/ (z[right angle bracket]x) grains in between the germanosilicide grains. On the other hand, the size of the germanosilicide grains increases almost linearly with annealing temperature while that for the Si/sub 1-z/Ge/sub z/ grains remains almost constant up to an annealing temperature of 700 degrees C, and above which it increases sharply. As a result, the Ge-rich Si/sub 1-z/Ge/sub z/ grains make the germanosilicide film discontinuous, leading to an increase in the sheet resistance of the germanosilicide film. (31 References).

Publication metadata

Author(s): Pey KL, Chattopadhyay S, Choi WK, Miron Y, Fitzgerald EA, Antoniadis DA, Osipowicz T

Publication type: Article

Publication status: Published

Journal: Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures Processing Measurement & Phenomena

Year: 2004

Volume: 22

Issue: 2

Pages: 852-858

ISSN (print): 1071-1023

ISSN (electronic): 1520-8567

Publisher: American Institute of Physics


DOI: 10.1116/1.1688350

Notes: Publisher: AIP for American Vacuum Soc, USA.


Altmetrics provided by Altmetric