Publications by Dr Sanatan Chattopadhyay - ePrints

Browsing publications by Dr Sanatan Chattopadhyay.

Newcastle Authors	Title	Year
Patrycja Stachelek Dr Sanatan Chattopadhyay Emeritus Professor Anthony Harriman	Solvent-Driven Conformational Exchange for Amide-Linked Bichromophoric BODIPY Derivatives	2016
Andrew Bryant Dr Ahmed Elattar Dr Sanatan Chattopadhyay	Surgical cytoreduction for recurrent epithelial ovarian cancer	2013
Dr Patrick Yu Wai Man Dr Sanatan Chattopadhyay Philip Griffiths Professor Patrick Chinnery	A randomized placebo-controlled trial of idebenone in Leber's hereditary optic neuropathy	2011
Santosh Shedabale Dr Gordon Russell Professor Alex Yakovlev Dr Sanatan Chattopadhyay	Statistical modelling of the variation in advanced process technologies using a multi-level partitioned response surface approach	2008
Dr Rajat Mahapatra Dr Alton Horsfall Dr Sanatan Chattopadhyay Professor Nick Wright	Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC	2007
Dr Rajat Mahapatra Peter Tappin Bing Miao Dr Alton Horsfall Dr Sanatan Chattopadhyay et al.	Impact of interfacial nitridation of HfO2 high-k gate dielectric stack on 4H-SiC	2007
Dr Sanatan Chattopadhyay Professor Alex Yakovlev	Impact of strain on the design of low-power high-speed circuits	2007
Dr Sanatan Chattopadhyay Professor Alex Yakovlev	Impact of strain on the design of low-power high-speed circuits	2007
Dr Rajat Mahapatra Nipapan Poolamai Dr Alton Horsfall Dr Sanatan Chattopadhyay Professor Nick Wright et al.	Leakage current and charge trapping behavior in Ti O2 Si O2 high- κ gate dielectric stack on 4H-SiC substrate	2007
Dr Yuk Tsang Dr Sanatan Chattopadhyay Dr Suresh Uppal Dr Enrique Escobedo-Cousin Deepak Ramakrishnan et al.	Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures	2007
Dr Yuk Tsang Dr Sanatan Chattopadhyay Dr Kelvin Kwa Goutan Dalapati Rouzet Agaiby et al.	Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture	2006
Dr Sanatan Chattopadhyay John Varzgar Dr Johan Seger Dr Yuk Tsang Dr Kelvin Kwa et al.	Capacitance-voltage (C-V) technique for the characterisation of stained Si/Si1-xGex hetero-structure MOS devices	2006
Dr Sanatan Chattopadhyay John Varzgar Dr Johan Seger Dr Yuk Tsang Dr Kelvin Kwa et al.	Capacitance-voltage (C-V) technique for the characterisation of strained Si/Si1-xGex hetero-structure MOS devices	2006
Dr Rajat Mahapatra Nipapan Poolamai Dr Sanatan Chattopadhyay Professor Nick Wright	Characterization of thermally oxidized Ti/SiO₂ gate dielectric stacks on 4H-SiC substrate	2006
Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rimoon Agaiby Dr Johan Seger et al.	Control of self-heating in thin virtual substrate strained Si MOSFETs	2006
Arup Saha Dr Sanatan Chattopadhyay	Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance-voltage technique	2006
Arup Saha Dr Sanatan Chattopadhyay	Effect of silicidation on the electrical characteristics of polycrystalline-SiGe Schottky diode	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Luke Driscoll Professor Anthony O'Neill Dr Kelvin Kwa et al.	Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Luke Driscoll Professor Anthony O'Neill Dr Kelvin Kwa et al.	Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer	2006
John Varzgar Dr Sanatan Chattopadhyay Dr Suresh Uppal Dr Sarah Olsen Professor Anthony O'Neill et al.	Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer	2006
Dr Suresh Uppal John Varzgar Dr Sanatan Chattopadhyay Dr Sarah Olsen Professor Anthony O'Neill et al.	Gate oxide reliability of strained Si/SiGe MOS: effect of Ge content variation	2006
Dr Suresh Uppal John Varzgar Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation	2006
Dr Suresh Uppal Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Rimoon Agaiby Dr Sarah Olsen et al.	Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices	2006
Dr Suresh Uppal Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Rouzet Agaiby Dr Sarah Olsen et al.	Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices	2006
Dr Ming-Hung Weng Dr Rajat Mahapatra Peter Tappin Bing Miao Dr Sanatan Chattopadhyay et al.	High temperature characterization of high-κ dielectrics on SiC	2006
Dr Suresh Uppal Dr Mehdi Kanoun John Varzgar Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices	2006
Dr Suresh Uppal Dr Mehdi Kanoun John Varzgar Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices	2006
Goutan Dalapati Dr Kelvin Kwa Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Dr Yuk Tsang et al.	Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs	2006
Arup Saha Dr Alton Horsfall Dr Sanatan Chattopadhyay Professor Nick Wright Professor Anthony O'Neill et al.	Quantum-mechanical modeling of current-voltage characteristics of Ti-silicided Schottky diodes	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Dr Yuriy Butenko Professor Lidija Siller	Rapid thermal oxidation of Ge-rich Si_1-xGe_x heterolayers	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Yuk Tsang et al.	Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Yuk Tsang et al.	Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures	2006
Professor Anthony O'Neill Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rimoon Agaiby et al.	Strained Si MOSFETs using thin virtual substrates	2006
Professor Anthony O'Neill Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rimoon Agaiby et al.	Strained Si technology	2006
Professor Anthony O'Neill Dr Sarah Olsen Dr Sanatan Chattopadhyay	Strained Si/SiGe MOS technology	2006
Professor Anthony O'Neill Dr Sarah Olsen Dr Enrique Escobedo-Cousin John Varzgar Rouzet Agaiby et al.	Strained silicon technology	2006
Dr Sanatan Chattopadhyay	Surface roughness and interface engineering for gate dielectrics on strained layers	2006
Goutan Dalapati Dr Kelvin Kwa Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface	2006
Arup Saha Dr Sanatan Chattopadhyay Goutan Dalapati	An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode	2005
Arup Saha Dr Alton Horsfall Dr Sanatan Chattopadhyay	Barrier In-homogeneities and Carrier Transport in Silicided Schottky Diodes	2005
Arup Saha Dr Sanatan Chattopadhyay	Characterization of Metal-Semiconductor Heterointerface using Capacitance-Voltage Technique	2005
Dr Sanatan Chattopadhyay Professor Alex Yakovlev Emeritus Professor Satnam Dlay Professor Anthony O'Neill	Design ofsrained silicon inverters for fture VLSI applications	2005
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Doubling speed using strained Si/SiGe CMOS technology	2005
Arup Saha Dr Sanatan Chattopadhyay Goutan Dalapati	Effect of annealing on interface state density of Ni-silicided/Si _1-xGe_x Schottky diode	2005
Arup Saha Dr Sanatan Chattopadhyay	Electrical Characterization of Ni-SiGe and Ni(Pt)-SiGe Schottky Diodes	2005
Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Goutan Dalapati et al.	Fowler-Nordheim tunnelling in strained Si/SiGe MOS devices: impact of cross-hatching and nanoscale roughness	2005
Dr Sarah Olsen Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	High performance strained Si.SiGe n-channel MOSFETs: impact of alloy composition and layer architecture	2005
Rudra Dhar Goutan Dalapati Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen et al.	Modelling of self-heating in strained Si n-channel MOSFETs on SiGe virtual substrates	2005
Dr Sanatan Chattopadhyay Arup Saha	Poly-SiGe Schottky	2005
Arup Saha Dr Alton Horsfall Dr Sanatan Chattopadhyay Professor Nick Wright Professor Anthony O'Neill et al.	Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode	2005
Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa Dr Jie Zhang et al.	Strained Si/SiGe CMOS: high performance without re-tooling	2005
Dr Sarah Olsen Professor Anthony O'Neill Dr Piotr Dobrosz Professor Steve Bull Luke Driscoll et al.	Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors	2005
Arup Saha Dr Sanatan Chattopadhyay	Technology CAD of silicided Schottky barrier MOSFET for elevated source-drain engineering	2005
Arup Saha Dr Sanatan Chattopadhyay	Technology CAD of Silicided Schottky Barrier MOSFETs for Elevated Source Drain Engineering	2005
Arup Saha Dr Sanatan Chattopadhyay	Contact metallization on strained-Si	2004
Dr Sarah Olsen Dr Kelvin Kwa Luke Driscoll Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	Design, fabrication and characterisation of strained Si/SiGe MOS transistors	2004
Arup Saha Dr Sanatan Chattopadhyay	Effect of annealing on interface state density of Ni-silicided Si1-xGex Schottky diodes	2004
Arup Saha Dr Sanatan Chattopadhyay	Effect of Annealing on Interface State Density of Ni-silicided Si1-xGex Schottky Diodes	2004
Arup Saha Dr Sanatan Chattopadhyay Goutan Dalapati	Electrical characterization of Niy(Si1-xGe x)1-y/Si1-xGex and NiSi/Si Schottky diodes	2004
Arup Saha Dr Sanatan Chattopadhyay	Electrical characterization of TiSi/Si_1-x-yGe_xC_y Schottky diodes	2004
Arup Saha Dr Sanatan Chattopadhyay	Electrical Characterization of TiSi/Si1-x-yGexCy Schottky Diodes	2004
Dr Sanatan Chattopadhyay	Electrical Characterization of TiSi/Si1-x-yGexCy Schottky Diodes	2004
Dr Sanatan Chattopadhyay Goutan Dalapati Arup Saha	Electrical Properties of NiSi/strained-Si Schottky diodes	2004
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Evaluation of strained Si/SiGe material for high performance CMOS	2004
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Evaluation of strained Si/SiGe material for high performance CMOS	2004
Lynn Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al.	Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters	2004
Luke Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al.	Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters	2004
Luke Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al.	Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters	2004
Luke Driscoll Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill Dr Kelvin Kwa et al.	Impact of Ge diffusion and wafer cross hatching on strained Si MOSFET electrical parameters	2004
Dr Sanatan Chattopadhyay	On the stability and composition of Ni-silicided Si1-xGex films	2004
Dr Sarah Olsen Professor Anthony O'Neill Luke Driscoll Dr Sanatan Chattopadhyay Dr Kelvin Kwa et al.	Optimization of alloy composition for high-performance strained-Si-SiGe N-channel MOSFETs	2004
Dr Sanatan Chattopadhyay	Stability and composition of Ni-germanosilicided Si/sub 1-x/Ge/sub x/ films	2004
Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill	Strained Si MOSFETs on relaxed SiGe platforms: Performance and challenges	2004
Dr Sarah Olsen Dr Kelvin Kwa Dr Sanatan Chattopadhyay Luke Driscoll Professor Anthony O'Neill et al.	Strained Si/SiGe n-channel MISFETs	2004
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Luke Driscoll Dr Kelvin Kwa et al.	Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs	2004
Dr Sarah Olsen Professor Anthony O'Neill Professor Steve Bull Dr Sanatan Chattopadhyay Dr Kelvin Kwa et al.	Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices	2004
Dr Kelvin Kwa Dr Sanatan Chattopadhyay Dr Nebojsa Jankovic Professor Dr Sarah Olsen Luke Driscoll et al.	A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics	2003
Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	Capacitance - Voltage Characterization of Strained Si/SiGe Multiple Heterojunction Capacitors as a Tool for Heterojunction Metal Oxide Semiconductor Field Effect Transistor Channel Design	2003
Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	C-V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design	2003
Dr Sarah Olsen Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	High performance strained Si.SiGe NMOSFETs using a novel CMOS architecture	2003
Dr Sarah Olsen Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	High performance strained Si/SiGe n-channel MOSFETs: impact of alloy composition and layer architecture	2003
Dr Sarah Olsen Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	High performance strained Si/SiGe nMOSFETs using a novel CMOS architecture	2003
Dr Sarah Olsen Professor Anthony O'Neill Luke Driscoll Dr Kelvin Kwa Dr Sanatan Chattopadhyay et al.	High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture	2003
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Impact of virtual substrate Ge composition on strained Si MOSFET performance	2003
Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll Professor Steve Bull et al.	Impact of Virtual Substrate Ge Composition on Strained Si MOSFET Performance	2003
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Dr Kelvin Kwa Luke Driscoll et al.	Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors	2003
Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Luke Driscoll Dr Kelvin Kwa et al.	N-MOSFET performance in single and dual channel strained Si/SiGe CMOS architectures	2003
Dr Kelvin Kwa Dr Sanatan Chattopadhyay Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	Optimisation of channel thickness in strained Si/SiGe MOSFETs	2003
Dr Kelvin Kwa Dr Sanatan Chattopadhyay Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	Optimisation of Channel Thickness in Strained Si/SiGe MOSFETs	2003
Dr Kelvin Kwa Dr Sanatan Chattopadhyay Dr Sarah Olsen Luke Driscoll Professor Anthony O'Neill et al.	Optimisation of channel thickness in strained Si/SiGe MOSFETs	2003
Dr Sanatan Chattopadhyay	Interfacial reactions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing	2002
Dr Sanatan Chattopadhyay	Thermal reaction of nickel and Si/sub 0.75/Ge/sub 0.25/ alloy	2002
Dr Sanatan Chattopadhyay	Thermal reaction of nickel and Si0.75 Ge0.25 alloy	2002