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Browsing publications by Dr Sanatan Chattopadhyay

Newcastle AuthorsTitleYearFull text
Patrycja Stachelek
Dr Sanatan Chattopadhyay
Emeritus Professor Anthony Harriman
Solvent-Driven Conformational Exchange for Amide-Linked Bichromophoric BODIPY Derivatives2016
Andrew Bryant
Dr Ahmed Elattar
Dr Sanatan Chattopadhyay
Surgical cytoreduction for recurrent epithelial ovarian cancer2013
Dr Patrick Yu Wai Man
Dr Sanatan Chattopadhyay
Philip Griffiths
Professor Patrick Chinnery
A randomized placebo-controlled trial of idebenone in Leber's hereditary optic neuropathy2011
Santosh Shedabale
Dr Gordon Russell
Professor Alex Yakovlev
Dr Sanatan Chattopadhyay
Statistical modelling of the variation in advanced process technologies using a multi-level partitioned response surface approach2008
Dr Rajat Mahapatra
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
Professor Nick Wright
Effects of interface engineering for HfO2 gate dielectric stack on 4H-SiC2007
Dr Rajat Mahapatra
Peter Tappin
Bing Miao
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
et al.		Impact of interfacial nitridation of HfO2 high-k gate dielectric stack on 4H-SiC2007
Dr Sanatan Chattopadhyay
Professor Alex Yakovlev
Impact of strain on the design of low-power high-speed circuits2007
Dr Sanatan Chattopadhyay
Professor Alex Yakovlev
Impact of strain on the design of low-power high-speed circuits2007
Dr Rajat Mahapatra
Nipapan Poolamai
Dr Alton Horsfall
Dr Sanatan Chattopadhyay
Professor Nick Wright
Leakage current and charge trapping behavior in Ti O2 Si O2 high- κ gate dielectric stack on 4H-SiC substrate2007
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Suresh Uppal
Dr Enrique Escobedo-Cousin
Deepak Ramakrishnan
et al.		Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures2007
Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Kelvin Kwa
Goutan Dalapati
Rouzet Agaiby
et al.		Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture2006
Dr Sanatan Chattopadhyay
John Varzgar
Dr Johan Seger
Dr Yuk Tsang
Dr Kelvin Kwa
et al.		Capacitance-voltage (C-V) technique for the characterisation of stained Si/Si1-xGex hetero-structure MOS devices2006
Dr Sanatan Chattopadhyay
John Varzgar
Dr Johan Seger
Dr Yuk Tsang
Dr Kelvin Kwa
et al.		Capacitance-voltage (C-V) technique for the characterisation of strained Si/Si1-xGex hetero-structure MOS devices2006
Dr Rajat Mahapatra
Nipapan Poolamai
Dr Sanatan Chattopadhyay
Professor Nick Wright
Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate2006
Dr Sarah Olsen
Dr Enrique Escobedo-Cousin
John Varzgar
Rimoon Agaiby
Dr Johan Seger
et al.		Control of self-heating in thin virtual substrate strained Si MOSFETs2006
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