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Thermal reaction of nickel and Si/sub 0.75/Ge/sub 0.25/ alloy

Lookup NU author(s): Dr Sanatan Chattopadhyay


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The interfacial reactions and chemical phase formation between nickel and ultrahigh vacuum chemical vapor deposited Si/sub 0.75/Ge/sub 0.25/ alloy have been studied within the temperature range of 300-900 degrees C for forming low resistive and uniform silicide films for future application in SiGe based metal-oxide-semiconductor field effect transistor devices. The silicided films were characterized by the X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman microscopy techniques. Smooth and uniform nickel monogermanosilicide NiSi/sub 0.75/Ge/sub 0.25/ films have been observed for samples annealed at around 400-500 degrees C. For annealing temperatures of 500 degrees C and above, Ge-rich Si/sub 1-z/Ge/sub z/ grains where z[right angle bracket]0.25 were found among Ge deficient Ni/sub y/(Si/sub w/Ge/sub 1-w/)/sub 1-y/ grains where w[left angle bracket]0.25 and the Ni/sub y/(Si/sub 1-w/Ge/sub w/)/sub 1-y/ phase is thermally stable up to an annealing temperature of 800 degrees C. We found that the Ni/SiGe reaction is mainly diffusion controlled with Ge and Ni as the dominant diffusing species compared to Si during the annealing process. In addition, Ge has been found to promote agglomeration especially above 700 degrees C, leading to an abrupt increase in the sheet resistance. (44 References).

Publication metadata

Author(s): Chattopadhyay S; Pey KL; Choi WK; Zhao HB; Fitzgerald EA; Antoniadis DA; Lee PS

Publication type: Article

Publication status: Published

Journal: Journal of Vacuum Science & Technology A

Year: 2002

Volume: 20

Issue: 6

Pages: 1903-1910

ISSN (print): 1553-1813

ISSN (electronic): 1944-2807

Publisher: American Institute of Physics


DOI: 10.1116/1.1507339

Notes: Publisher: AIP for American Vacuum Soc, USA.


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