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Lookup NU author(s): Dr Sanatan Chattopadhyay
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The interfacial reactions and chemical phase formation between nickel and ultrahigh vacuum chemical vapor deposited Si/sub 0.75/Ge/sub 0.25/ alloy have been studied within the temperature range of 300-900 degrees C for forming low resistive and uniform silicide films for future application in SiGe based metal-oxide-semiconductor field effect transistor devices. The silicided films were characterized by the X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman microscopy techniques. Smooth and uniform nickel monogermanosilicide NiSi/sub 0.75/Ge/sub 0.25/ films have been observed for samples annealed at around 400-500 degrees C. For annealing temperatures of 500 degrees C and above, Ge-rich Si/sub 1-z/Ge/sub z/ grains where z[right angle bracket]0.25 were found among Ge deficient Ni/sub y/(Si/sub w/Ge/sub 1-w/)/sub 1-y/ grains where w[left angle bracket]0.25 and the Ni/sub y/(Si/sub 1-w/Ge/sub w/)/sub 1-y/ phase is thermally stable up to an annealing temperature of 800 degrees C. We found that the Ni/SiGe reaction is mainly diffusion controlled with Ge and Ni as the dominant diffusing species compared to Si during the annealing process. In addition, Ge has been found to promote agglomeration especially above 700 degrees C, leading to an abrupt increase in the sheet resistance. (44 References).
Author(s): Chattopadhyay S; Pey KL; Choi WK; Zhao HB; Fitzgerald EA; Antoniadis DA; Lee PS
Publication type: Article
Publication status: Published
Journal: Journal of Vacuum Science & Technology A
Year: 2002
Volume: 20
Issue: 6
Pages: 1903-1910
ISSN (print): 1553-1813
ISSN (electronic): 1944-2807
Publisher: American Institute of Physics
URL: http://dx.doi.org/10.1116/1.1507339
DOI: 10.1116/1.1507339
Notes: Publisher: AIP for American Vacuum Soc, USA.
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