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Arsenic diffusion in Si and strained SixGe1-x alloys at 1000°C

Lookup NU author(s): Dr Suresh Uppal, Jingyi Zhang

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Abstract

Results of arsenic diffusion under intrinsic diffusion conditions in Si and SiGe (5, 10% Ge) alloys are presented. Epitaxial Si and compressively strained SiGe structures with buried marker layers of arsenic were grown using Molecular Beam Epitaxy. The concentration profiles before and after Rapid Thermal Annealing at 1000°C have been measured using SIMS. An enhancement of intrinsic arsenic diffusivity in SiGe compared to Si is observed, in agreement with literature. However, for As in Si0.95Ge 0.05 strain seems to compensate the effect of enhancement due to Ge chemical effect although for Si0.9Ge0.1 the chemical effect overcomes the retardation due to strain.

Publication metadata

Author(s): Uppal S, Bonar JM, Zhang J, Willoughby AFW

Publication type: Article

Publication status: Published

Journal: Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Year: 2004

Volume: 114-115

Pages: 349-351

ISSN (print): 0921-5107

ISSN (electronic): 1873-4944

Publisher: Elsevier SA

URL: http://dx.doi.org/10.1016/j.mseb.2004.07.061

DOI: 10.1016/j.mseb.2004.07.061

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