Dr Yuk Tsang
Dr Sanatan Chattopadhyay
Dr Suresh Uppal
Dr Enrique Escobedo-Cousin
Deepak Ramakrishnan
et al. | Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures | 2007 |
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Dr Suresh Uppal
| Monte Carlo simulation of Boron implantation into (100) germanium | 2007 |
|
Dr Suresh Uppal
| A study of boron implantation into high Ge content SiGe alloys | 2006 |
|
Professor Nick Cowern
Dr Suresh Uppal
| Diffusion and activation of dopants in silicon and advanced silicon-based materials | 2006 |
|
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al. | Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer | 2006 |
|
John Varzgar
Dr Sanatan Chattopadhyay
Dr Suresh Uppal
Dr Sarah Olsen
Professor Anthony O'Neill
et al. | Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer | 2006 |
|
Dr Suresh Uppal
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
Professor Anthony O'Neill
et al. | Gate oxide reliability of strained Si/SiGe MOS: effect of Ge content variation | 2006 |
|
Dr Suresh Uppal
John Varzgar
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al. | Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation | 2006 |
|
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rimoon Agaiby
Dr Sarah Olsen
et al. | Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices | 2006 |
|
Dr Suresh Uppal
Dr Mehdi Kanoun
Dr Sanatan Chattopadhyay
Rouzet Agaiby
Dr Sarah Olsen
et al. | Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices | 2006 |
|
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al. | Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices | 2006 |
|
Dr Suresh Uppal
Dr Mehdi Kanoun
John Varzgar
Dr Sanatan Chattopadhyay
Dr Sarah Olsen
et al. | Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices | 2006 |
|
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al. | Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures | 2006 |
|
John Varzgar
Dr Mehdi Kanoun
Dr Suresh Uppal
Dr Sanatan Chattopadhyay
Dr Yuk Tsang
et al. | Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures | 2006 |
|
Dr Suresh Uppal
| An electrically driven mid-infrared solid-state modulator | 2005 |
|
Dr Suresh Uppal
| An electrically driven solid state modulator | 2005 |
|
Dr Suresh Uppal
| Design of an electrically operated mid-infrared solid-state modulator | 2005 |
|
Dr Suresh Uppal
Dr Jingyi Zhang
| Arsenic diffusion in Si and Si0.9°Ge0.1 alloys: Effect of defect injection | 2004 |
|
Dr Suresh Uppal
Jingyi Zhang
| Arsenic diffusion in Si and strained SixGe1-x alloys at 1000°C | 2004 |
|
Dr Suresh Uppal
| Boron diffusion in High Ge content SiGe alloys | 2004 |
|
Dr Suresh Uppal
Dr Jun Zhang
| Diffusion in sige: Defect injection studies in Sb, as and B | 2004 |
|
Dr Suresh Uppal
Professor Nick Cowern
| Diffusion of boron in germanium at 800–900°C | 2004 |
|
Dr Suresh Uppal
Professor Nick Cowern
| Diffusion of ion-implanted boron and silicon in germanium | 2004 |
|
Dr Suresh Uppal
Professor Nick Cowern
| Diffusion of ion-implanted Boron and Silicon in Germanium | 2004 |
|
Dr Suresh Uppal
Dr Jingyi Zhang
| Evidence for a vacancy and interstitial mediated diffusion of As in Si and Si0.9Ge0.1 | 2004 |
|
Dr Suresh Uppal
Professor Nick Cowern
| Diffusion of boron in germanium and Si1-xGex (x>50%) alloys | 2003 |
|
Dr Suresh Uppal
Professor Nick Cowern
| Diffusion of ion-implanted Boron in Germanium | 2001 |
|
Dr Suresh Uppal
Professor Nick Cowern
| Ion-implantation and diffusion behaviour of boron in germanium | 2001 |
|
Dr Suresh Uppal
| Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells | 2000 |
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