Publications by Dr Suresh Uppal - ePrints

Browsing publications by Dr Suresh Uppal.

Newcastle Authors	Title	Year
Dr Yuk Tsang Dr Sanatan Chattopadhyay Dr Suresh Uppal Dr Enrique Escobedo-Cousin Deepak Ramakrishnan et al.	Modeling of the threshold voltage in strained Si/Si1-x Gex/S1-yGey(x ≥ y) CMOS architectures	2007
Dr Suresh Uppal	Monte Carlo simulation of Boron implantation into (100) germanium	2007
Dr Suresh Uppal	A study of boron implantation into high Ge content SiGe alloys	2006
Professor Nick Cowern Dr Suresh Uppal	Diffusion and activation of dopants in silicon and advanced silicon-based materials	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Gate Oxide Reliability of Strained Si NMOS Devices Employing a Thin SiFe Strain Relaxed Buffer	2006
John Varzgar Dr Sanatan Chattopadhyay Dr Suresh Uppal Dr Sarah Olsen Professor Anthony O'Neill et al.	Gate oxide reliability of strained Si NMOS devices employing a thin SiGe strain-relaxed buffer	2006
Dr Suresh Uppal John Varzgar Dr Sanatan Chattopadhyay Dr Sarah Olsen Professor Anthony O'Neill et al.	Gate oxide reliability of strained Si/SiGe MOS: effect of Ge content variation	2006
Dr Suresh Uppal John Varzgar Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Gate Oxide Reliability on strained Si/SiGe MOS: Effect of Ge content variation	2006
Dr Suresh Uppal Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Rimoon Agaiby Dr Sarah Olsen et al.	Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices	2006
Dr Suresh Uppal Dr Mehdi Kanoun Dr Sanatan Chattopadhyay Rouzet Agaiby Dr Sarah Olsen et al.	Ge out-diffusion and its effect on electrical properties in s-Si/SiGe devices	2006
Dr Suresh Uppal Dr Mehdi Kanoun John Varzgar Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices	2006
Dr Suresh Uppal Dr Mehdi Kanoun John Varzgar Dr Sanatan Chattopadhyay Dr Sarah Olsen et al.	Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Yuk Tsang et al.	Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures	2006
John Varzgar Dr Mehdi Kanoun Dr Suresh Uppal Dr Sanatan Chattopadhyay Dr Yuk Tsang et al.	Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures	2006
Dr Suresh Uppal	An electrically driven mid-infrared solid-state modulator	2005
Dr Suresh Uppal	An electrically driven solid state modulator	2005
Dr Suresh Uppal	Design of an electrically operated mid-infrared solid-state modulator	2005
Dr Suresh Uppal Dr Jingyi Zhang	Arsenic diffusion in Si and Si0.9°Ge0.1 alloys: Effect of defect injection	2004
Dr Suresh Uppal Jingyi Zhang	Arsenic diffusion in Si and strained SixGe1-x alloys at 1000°C	2004
Dr Suresh Uppal	Boron diffusion in High Ge content SiGe alloys	2004
Dr Suresh Uppal Dr Jun Zhang	Diffusion in sige: Defect injection studies in Sb, as and B	2004
Dr Suresh Uppal Professor Nick Cowern	Diffusion of boron in germanium at 800–900°C	2004
Dr Suresh Uppal Professor Nick Cowern	Diffusion of ion-implanted boron and silicon in germanium	2004
Dr Suresh Uppal Professor Nick Cowern	Diffusion of ion-implanted Boron and Silicon in Germanium	2004
Dr Suresh Uppal Dr Jingyi Zhang	Evidence for a vacancy and interstitial mediated diffusion of As in Si and Si0.9Ge0.1	2004
Dr Suresh Uppal Professor Nick Cowern	Diffusion of boron in germanium and Si1-xGex (x>50%) alloys	2003
Dr Suresh Uppal Professor Nick Cowern	Diffusion of ion-implanted Boron in Germanium	2001
Dr Suresh Uppal Professor Nick Cowern	Ion-implantation and diffusion behaviour of boron in germanium	2001
Dr Suresh Uppal	Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells	2000