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Lookup NU author(s): Arup Saha, Dr Sanatan Chattopadhyay
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TiSi/Si1-x-yGexCy Schottky diodes have been fabricated on both Si1-x-yGexCy layers with and without a Si-cap layer and Rutherford backscattering spectroscopy (RBS) was used to verify the thickness and composition of the silicide phases. The forward- and reverse-current voltage (I-V) characteristics for the diodes were measured in the temperature range of 100-300K to determine the Schottky barrier height ( phib) and ideality factor (n). It has been found that the ideality factor decreases with an increase in temperature while the barrier height increases. The effect of the Si-cap layer on electrical characteristics of the Si1-x-yGexCy Schottky diodes is also studied. Results are compared with a similar TiSi/Si Schottky diode processed in the same run. [All rights reserved Elsevier] (17 References).
Author(s): Saha AR, Chattopadhyay S, Maiti CK
Editor(s): Mannino, G; Feudel, T; Pichler, P; Servidori, M
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Materials Science & Engineering B (Solid-State Materials for Advanced Technology)
Year of Conference: 2004
Pages: 218-22
ISSN: 1873-4944
Publisher: Materials Science and Engineering B
URL: .E-MRS 2004 Spring Meeting
Notes: Symposium B: Material Science Issues in Advanced CMOS Source-Drain Engineering
