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Process for producing III-V nitride pn junctions and p-i-n junctions

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD


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A process is disclosed for producing pn junctions and p-i-n junctions from group III nitride compound semiconductor materials. The process comprises growing of pn junctions and p-i-n junctions by hydride vapor phase epitaxy employing hydride of nitrogen (ammonia, hydrozine) as a source of nitrogen and halides of group III metal as a source of metal. Mg is used as acceptor impurity to form p-type III-V nitride layers. The preferred sources for Ga and Al are Ga and Al metals, respectively. The process is carried out in the temperature range from 900 to C.

Publication metadata

Inventor(s): Vassilevski K; Nikolaev A; Melnik Y; Dmitriev V

Publication type: Patent

Publication status: Published

Year: 2001

Assignee: Technology and Devices International, Inc.

Source Publication Date: 17-04-2001