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Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD


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Publication metadata

Inventor(s): Vassilevski K; Zekentes K

Publication type: Patent

Publication status: Published

Year: 2003

Print publication date: 29/07/2003

Assignee: Foundation for Research & Technology-Hellas (Crete,GR)

Country: US

Source Publication Date: 29 July 2003