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III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD

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Inventor(s): Nikolaev A, Melnik Y, Dmitriev V, Vassilevski K

Publication type: Patent

Publication status: Published

Year: 2005

Print publication date: 18/05/2001

Assignee: Technologies and Devices International, Inc.

Country: Gaithersburg, Maryland, US

Source Publication Date: 18 May 2001

URL: http://www.freepatentsonline.com/6849862.html

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