Browse by author
Lookup NU author(s): Professor Steve BullORCiD
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
The vacancy profile in Czochralski silicon (111) implanted with 50 keV nitrogen ions has been determined using positron annihilation spectroscopy. The nitrogen distribution has been measured using secondary ion mass spectroscopy. The fitted defect distribution compares well with the results of TRIM calculations.
Author(s): Van Der Werf DP, Saleh AS, Towner A, Nathwani M, Taylor J, Rice-Evans PC, Bull SJ
Publication type: Article
Publication status: Published
Journal: Materials Science Forum
Print publication date: 01/01/1997
ISSN (print): 0255-5476
ISSN (electronic): 1422-6375
Publisher: Trans Tech Publications