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Sulphur based surface passivation for high voltage GaAS Schottky diodes

Lookup NU author(s): Professor Nick Wright, Dr Christopher Johnson, Professor Anthony O'Neill

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Abstract

Surface passivation of high voltage GaAs Schottky diodes by sulphur containing solutions is investigated. A range of diodes with maximum voltage ratings in excess of 100 V were fabricated using Na2S or (NH4)2SX chemical treatments prior to Schottky deposition. It is demonstrated that, whilst Na2S might provide an efficient passivation at low reverse biases, diodes passivated with this chemical showed little reduction in reverse leakage current under high reverse voltages. By contrast, (NH4)2SX is shown to be an effective surface passivation under reverse bias in excess of 200 V - reducing leakage currents by at least two orders of magnitude in simple diodes (from 10-2 to 10-4 A cm-2) and extending the breakdown voltage of mesa terminated diodes from 150 to 250 V. © 1998 Elsevier Science Ltd. All rights reserved.


Publication metadata

Author(s): Wright NG, Johnson CM, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Solid-State Electronics

Year: 1998

Volume: 42

Issue: 3

Pages: 437-440

Print publication date: 30/03/1998

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/S0038-1101(97)00275-X

DOI: 10.1016/S0038-1101(97)00275-X


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