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Lookup NU author(s): Professor Anthony O'Neill,
Dr Christopher Johnson
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The suitability of SiC p-n junction and Schottky varactor diodes for high frequency applications is demonstrated. It is shown that such devices are capable of operating at high biases (over 130V) - offering greater power density, impedance and operating temperature compared to conventional GaAs or Si varactors. The limitations induced by relatively high contact resistivities are evaluated in terms of applications at 10GHz.
Author(s): Wright NG, Knights AP, O'Neill AG, Johnson CM
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 7th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications: Edmo
Year of Conference: 1999
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