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Evaluation of 4H-SiC varactor diodes for microwave applications

Lookup NU author(s): Professor Anthony O'Neill, Dr Christopher Johnson

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Abstract

The suitability of SiC p-n junction and Schottky varactor diodes for high frequency applications is demonstrated. It is shown that such devices are capable of operating at high biases (over 130V) - offering greater power density, impedance and operating temperature compared to conventional GaAs or Si varactors. The limitations induced by relatively high contact resistivities are evaluated in terms of applications at 10GHz.


Publication metadata

Author(s): Wright NG, Knights AP, O'Neill AG, Johnson CM

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 7th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications: Edmo

Year of Conference: 1999

Pages: 301-306

Publisher: IEEE

URL: http://dx.doi.org/10.1109/EDMO.1999.821502

DOI: 10.1109/EDMO.1999.821502

Library holdings: Search Newcastle University Library for this item

ISBN: 078035298X


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