Browse by author
Lookup NU author(s): Professor Anthony O'Neill
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Heterojunction MOSFETs (HMOSFETs), grown on a virtual substrate of SiGe and having a strained silicon channel, have been fabricated. A conventional silicon MOS process was used, including dry thermal oxidation and high temperature source-drain annealing. Good transistor 1-V characteristics were obtained for devices having drawn gate lengths between 150 nm and 10 μm and an extrinsic transconductance of 220 mS mm-1 is reported for the 150 nm gate length device. Technology computer aided design (TCAD) is used to determine that the bulk low field mobility of the strained silicon which forms the channel is 1500 cm2 V-1 s-1, while the source-drain series resistance is 1.5 Ω mm. Good agreement between simulated and experimental 1-V data is obtained.
Author(s): O'Neill AG; Routley P; Gurry PK; Clifton PA; Kemhadjian H; Fernandez J; Cullis AG; Benedetti A
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
Print publication date: 01/09/1999
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd.
Altmetrics provided by Altmetric