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SiGe virtual substrate N-channel heterojunction MOSFETs

Lookup NU author(s): Professor Anthony O'Neill

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Abstract

Heterojunction MOSFETs (HMOSFETs), grown on a virtual substrate of SiGe and having a strained silicon channel, have been fabricated. A conventional silicon MOS process was used, including dry thermal oxidation and high temperature source-drain annealing. Good transistor 1-V characteristics were obtained for devices having drawn gate lengths between 150 nm and 10 μm and an extrinsic transconductance of 220 mS mm-1 is reported for the 150 nm gate length device. Technology computer aided design (TCAD) is used to determine that the bulk low field mobility of the strained silicon which forms the channel is 1500 cm2 V-1 s-1, while the source-drain series resistance is 1.5 Ω mm. Good agreement between simulated and experimental 1-V data is obtained.


Publication metadata

Author(s): O'Neill AG; Routley P; Gurry PK; Clifton PA; Kemhadjian H; Fernandez J; Cullis AG; Benedetti A

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 1999

Volume: 14

Issue: 9

Pages: 784-789

Print publication date: 01/09/1999

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0268-1242/14/9/307

DOI: 10.1088/0268-1242/14/9/307


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