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Oxidation modelling for SiC

Lookup NU author(s): Dr Christopher Johnson, Professor Anthony O'Neill


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A simple mechanistic model of the oxidation of SiC is presented and analysed using Monte-Carlo simulation techniques. The model explains the observed anisotropic oxidation rate of SiC in terms of the effect of weakening/strengthening of Si-C bonds arising from the ongoing incorporation of highly electronegative oxygen atoms into the crystal lattice. The extraction of key process metrics (such as oxide thickness, interface roughness and oxide defect density) from the Monte-Carlo simulations is discussed.

Publication metadata

Author(s): Wright NG, Johnson CM, O'Neill AG

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Research Society Symposium - Proceedings of Spring Meeting

Year of Conference: 1999

Pages: 135-140

ISSN: 0272-9172

Publisher: Materials Research Society


DOI: 10.1557/PROC-572-135

Library holdings: Search Newcastle University Library for this item

ISBN: 19464274