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Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes

Lookup NU author(s): Dominique Morrison, Professor Nick Wright, Dr Christopher Johnson, Professor Anthony O'Neill

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Abstract

The aim of this study was to improve the adhesion of Au Schottky contacts to SiC. In order to do this, before the deposition of the Au layer, a thin layer of Ti was deposited. However, this resulted in an anomalous step in the forward bias electrical characteristic for some diodes. An equivalent circuit model is introduced to explain this irregularity in terms of two barrier heights. PSPICE is used to simulate this model. Simulated and experimental data are in good agreement over the temperature range 25 to 250°C. © 1999 Elsevier Science S.A.


Publication metadata

Author(s): Morrison DJ, Hilton KP, Uren MJ, Wright NG, Johnson CM, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Year: 1999

Volume: 61-62

Issue: 0

Pages: 345-348

Print publication date: 30/07/1999

ISSN (print): 0921-5107

Publisher: Elsevier S.A.

URL: http://dx.doi.org/10.1016/S0921-5107(98)00531-5

DOI: 10.1016/S0921-5107(98)00531-5


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