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Lookup NU author(s): Dr Sylvie Ortolland, Dr Christopher Johnson
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In this paper, the optimisation procedure for a Static Induction Transistor (SIT) in silicon carbide is described and its application in a typical RF heating circuit is presented. A field plate edge termination is optimised for a 10 μm thick epitaxial layer with doping in the range 1015 cm -3 to 1016 cm-3. Results show a breakdown voltage of 1280 V, corresponding to 68 % of the theoretical value. For the chosen application an epitaxial layer doping level of 5×1015 cm-3 is revealed to offer the best compromise. This allows pinch off of drain voltages exceeding 600 V from a 20 V gate drive whilst achieving a current density of 250 A/cm2 at an on-state voltage of less than 1 V. Transient simulations are performed for a series load resonant converter using SiC SITs or silicon MOSFET with a switching frequency of 27.12 MHz. The results emphasise the suitability of the SIT for RF heating applications.
Author(s): Ortolland S, Johnson CM
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: IEE Colloquium Advances in Semiconductor Devices
Year of Conference: 1999
Pages: 2-5
Publisher: IEEE
URL: http://dx.doi.org/10.1049/ic:19990150
DOI: 10.1049/ic:19990150
