Dr Gordon Phelps
Professor Nick Wright
Dr Graeme Chester
Dr Christopher Johnson
Professor Anthony O'Neill
et al. | Enhanced dopant diffusion effects in 4H silicon carbide | 2002 |
|
Dr Gordon Phelps
Professor Nick Wright
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Sylvie Ortolland
et al. | Enhanced nitrogen diffusion in 4H-SiC | 2002 |
|
Dr Gordon Phelps
Professor Nick Wright
Dr Graeme Chester
Dr Christopher Johnson
Professor Anthony O'Neill
et al. | Enhanced nitrogen diffusion in 4H-SiC | 2002 |
|
Dr Alton Horsfall
Dr Sylvie Ortolland
Professor Nick Wright
Dr Christopher Johnson
| Double implanted power MESFET technology in 4H-SiC | 2001 |
|
Dr Sylvie Ortolland
Professor Nick Wright
Dr Christopher Johnson
| Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor | 2001 |
|
Professor Nick Wright
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Alton Horsfall
Dr Sylvie Ortolland
et al. | Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology | 2001 |
|
Dr Christopher Johnson
Professor Nick Wright
Dominique Morrison
Dr Alton Horsfall
Dr Sylvie Ortolland
et al. | Recent progress and current issues in SiC semiconductor devices for power applications | 2001 |
|
Dr Alton Horsfall
Dr Sylvie Ortolland
Dr Christopher Johnson
| Double implanted power MESFET technology in 4H-SiC | 2000 |
|
Professor Nick Wright
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Alton Horsfall
Dr Sylvie Ortolland
et al. | Implanted bipolar technology in 4H-SiC | 2000 |
|
Professor Nick Wright
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Alton Horsfall
Dr Sylvie Ortolland
et al. | Implanted bipolar technology in 4H-SiC | 2000 |
|
Dominique Morrison
Professor Nick Wright
Dr Sylvie Ortolland
Dr Christopher Johnson
Professor Anthony O'Neill
et al. | Low temperature annealing of 4H-SiC Schottky diode edge terminations 4 formed by 30 keV Ar+ implantation | 2000 |
|
Professor Nick Wright
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Alton Horsfall
Dr Sylvie Ortolland
et al. | Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology | 2000 |
|
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Alton Horsfall
Dr Sylvie Ortolland
Kazuhiro Adachi
et al. | Physical characterization of residual implant damage in 4H-SiC double implanted bipolar technology | 2000 |
|
Kazuhiro Adachi
Dr Christopher Johnson
Dr Sylvie Ortolland
Professor Anthony O'Neill
| TCAD evaluation of double implanted 4H-SiC power bipolar transistors | 2000 |
|
Dr Sylvie Ortolland
Dr Christopher Johnson
| 4H-SIC SIT device for RF heating applications | 1999 |
|
Dr Sylvie Ortolland
Dr Christopher Johnson
Professor Nick Wright
Dominique Morrison
Professor Anthony O'Neill
et al. | Optimisation of a power 4H-SiC SIT device for RF heating applications | 1999 |
|
Dr Sylvie Ortolland
Dr Christopher Johnson
Dominique Morrison
Professor Anthony O'Neill
| Optimisation of a power 4H-SiC SIT device for RF heating applications | 1999 |
|
Kazuhiro Adachi
Dr Christopher Johnson
Dr Sylvie Ortolland
Professor Nick Wright
Professor Anthony O'Neill
et al. | TCAD evaluation of double implanted 4H-SiC power bipolar transistors | 1999 |
|
Dominique Morrison
Dr Christopher Johnson
Professor Anthony O'Neill
Dr Sylvie Ortolland
| The effect of annealing on argon implanted edge terminations for 4H-SiC Schottky diodes | 1999 |
|
