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Cell geometry optimisation of 4H-SiC power UMOSFETs by electrothermal simulation

Lookup NU author(s): Professor Nick Wright, Dr Christopher Johnson, Professor Anthony O'Neill

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Abstract

Technology computer aided design (TCAD) models for electrothermal simulation of 4H-SiC UMOSFET devices are used to show that: (1) temperature gradients along the highly resistive channels of UMOSFET devices are not significant and (2) neglecting electrothermal effects during cell design simulations can lead to a nonoptimal cell geometry, resulting in up to 45% degradation in device on-state resistance. © 1999 Elsevier Science Ltd. All rights reserved.

Publication metadata

Author(s): Wright NG, Johnson CM, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Solid-State Electronics

Year: 1999

Volume: 43

Issue: 3

Pages: 515-520

Print publication date: 02/02/1999

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/S0038-1101(98)00286-X

DOI: 10.1016/S0038-1101(98)00286-X

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