Toggle Main Menu Toggle Search

Open Access padlockePrints

Cell geometry optimisation of 4H-SiC power UMOSFETs by electrothermal simulation

Lookup NU author(s): Professor Nick Wright, Dr Christopher Johnson, Professor Anthony O'Neill


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Technology computer aided design (TCAD) models for electrothermal simulation of 4H-SiC UMOSFET devices are used to show that: (1) temperature gradients along the highly resistive channels of UMOSFET devices are not significant and (2) neglecting electrothermal effects during cell design simulations can lead to a nonoptimal cell geometry, resulting in up to 45% degradation in device on-state resistance. © 1999 Elsevier Science Ltd. All rights reserved.

Publication metadata

Author(s): Wright NG, Johnson CM, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Solid-State Electronics

Year: 1999

Volume: 43

Issue: 3

Pages: 515-520

Print publication date: 02/02/1999

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon


DOI: 10.1016/S0038-1101(98)00286-X


Altmetrics provided by Altmetric