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Lookup NU author(s): Professor Nick Wright,
Dr Christopher Johnson,
Professor Anthony O'Neill
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Technology computer aided design (TCAD) models for electrothermal simulation of 4H-SiC UMOSFET devices are used to show that: (1) temperature gradients along the highly resistive channels of UMOSFET devices are not significant and (2) neglecting electrothermal effects during cell design simulations can lead to a nonoptimal cell geometry, resulting in up to 45% degradation in device on-state resistance. © 1999 Elsevier Science Ltd. All rights reserved.
Author(s): Wright NG, Johnson CM, O'Neill AG
Publication type: Article
Publication status: Published
Journal: Solid-State Electronics
Print publication date: 02/02/1999
ISSN (print): 0038-1101
ISSN (electronic): 1879-2405
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