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Lookup NU author(s): Professor Anthony O'Neill
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In this paper, we describe some of the results that we have obtained using Wafer Level Joule Heated Electromigration Test and Current Ramp Test. The results indicate that the Cu we tested is more resistive to open failure due to current ramp than Al-1%Si-0.5%Cu. The value of the activation energy for electromigration of Cu using fixed current under wafer level joule heated electromigration test is 0.59 eV. The activation energy due to the effect of temperature gradient failure mechanism is 0.82 eV.
Author(s): Low KS, O'Neill A
Publication type: Article
Publication status: Published
Journal: Materials Research Society Symposium - Proceedings
Print publication date: 01/01/1999
ISSN (print): 0272-9172
Publisher: Materials Research Society
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