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Reliability studies of Cu using wafer level joule heated electromigration test

Lookup NU author(s): Professor Anthony O'Neill

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Abstract

In this paper, we describe some of the results that we have obtained using Wafer Level Joule Heated Electromigration Test and Current Ramp Test. The results indicate that the Cu we tested is more resistive to open failure due to current ramp than Al-1%Si-0.5%Cu. The value of the activation energy for electromigration of Cu using fixed current under wafer level joule heated electromigration test is 0.59 eV. The activation energy due to the effect of temperature gradient failure mechanism is 0.82 eV.

Publication metadata

Author(s): Low KS, O'Neill A

Publication type: Article

Publication status: Published

Journal: Materials Research Society Symposium - Proceedings

Year: 1999

Volume: 564

Pages: 365-370

Print publication date: 01/01/1999

ISSN (print): 0272-9172

ISSN (electronic):

Publisher: Materials Research Society

URL: http://dx.doi.org/10.1557/PROC-564-365

DOI: 10.1557/PROC-564-365

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