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Lookup NU author(s): Dominique Morrison,
Professor Nick Wright,
Dr Alton Horsfall,
Dr Christopher Johnson,
Professor Anthony O'Neill
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The effects of post-implantation annealing on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned Ar+ ion implantation have been investigated. Results show that the Ar+ edge termination may be modelled as a shunt linear resistive path at low to moderate reverse bias levels and at low forward bias levels. Low temperature (400-700 °C) annealing is shown to increase the equivalent resistance of the edge termination by two orders of magnitude without significant effect on the breakdown voltage. Annealing temperatures above 600 °C are, however, shown to degrade the on-state performance. A breakdown voltage of 1530 V was achieved on the implanted and annealed samples, representing 90% of the theoretical parallel plane breakdown voltage. Temperature dependent measurements, made over the temperature range 25-400 °C show that the equivalent resistance of the edge termination is thermally activated with an exponential temperature coefficient of -0.02 K-1. Behaviour at moderate forward bias levels is typical of thermionic emission whilst operation at high forward bias is dominated by a linear series resistance which shows a quadratic temperature dependence, increasing by a factor of 6 over the range 25-400 °C.
Author(s): Wright NG; O'Neill AG; Horsfall AB; Morrison DJ; Johnson CM; Knights AP; Hilton KP; Uren MJ
Publication type: Article
Publication status: Published
Journal: Solid-State Electronics
ISSN (print): 0038-1101
ISSN (electronic): 1879-2405
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