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Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation

Lookup NU author(s): Dominique Morrison, Professor Nick Wright, Dr Alton Horsfall, Dr Christopher Johnson, Professor Anthony O'Neill

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Abstract

The effects of post-implantation annealing on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned Ar+ ion implantation have been investigated. Results show that the Ar+ edge termination may be modelled as a shunt linear resistive path at low to moderate reverse bias levels and at low forward bias levels. Low temperature (400-700 °C) annealing is shown to increase the equivalent resistance of the edge termination by two orders of magnitude without significant effect on the breakdown voltage. Annealing temperatures above 600 °C are, however, shown to degrade the on-state performance. A breakdown voltage of 1530 V was achieved on the implanted and annealed samples, representing 90% of the theoretical parallel plane breakdown voltage. Temperature dependent measurements, made over the temperature range 25-400 °C show that the equivalent resistance of the edge termination is thermally activated with an exponential temperature coefficient of -0.02 K-1. Behaviour at moderate forward bias levels is typical of thermionic emission whilst operation at high forward bias is dominated by a linear series resistance which shows a quadratic temperature dependence, increasing by a factor of 6 over the range 25-400 °C.


Publication metadata

Author(s): Wright NG; O'Neill AG; Horsfall AB; Morrison DJ; Johnson CM; Knights AP; Hilton KP; Uren MJ

Publication type: Article

Publication status: Published

Journal: Solid-State Electronics

Year: 2000

Volume: 44

Issue: 11

Pages: 1879-1885

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/S0038-1101(00)00177-5

DOI: 10.1016/S0038-1101(00)00177-5


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