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Characteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices

Lookup NU author(s): Dr Rajat Mahapatra, Professor Nick Wright


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Publication metadata

Author(s): Mahapatra R, Poolamai N, Wright NG, Coleman PG, Burrows CP

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 208th Meeting of the Electrochemical Society (ECS)

Year of Conference: 2005