Browse by author
Lookup NU author(s): Thomas Malkow,
Professor Steve BullORCiD
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Hard CN(x) films were prepared by nitrogen ion beam-assisted deposition (IBAD) of evaporated carbon on silicon wafers with a nitrogen ion energy of 100-1200 eV, ion/neutral transport ratios from 0.7 to 1.7, and deposition temperatures from RT to 1000°C. By varying the deposition parameters a maximum nitrogen content of below 33 at.% was found at N/C transport ratios of approximately 1.2. XPS measurements reflect a shift of the main chemical state of the nitrogen bonds with changing nitrogen content of the films and with increasing deposition temperature. The nitrogen content of the films decreases significantly with increasing temperatures above 600°C. EELS investigations show weak changes of the plasmon peak position and the sp2/sp3 ratio with increasing deposition temperature in correlation to the nitrogen content of the carbon films. Nanoindentation techniques have been used to investigate the mechanical properties of the films. All measured structural and mechanical properties correlate with the analysed nitrogen content. (C) 2000 Elsevier Science S.A. All rights reserved.
Author(s): Kolitsch A, Moller W, Malkow T, Bull SJ, Magula V, Domankova M
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 11th International Conference on Surface Modification of Metals by Ion Beams (SMMIB-99)
Year of Conference: 2000
Publisher: Surface and Coatings Technology, Elsevier