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High channel mobility in normally-off 4H-SiC buried channel MOSFETs

Lookup NU author(s): Kazuhiro Adachi

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Abstract

We have fabricated buried channel (BC) MOSFETs with a thermally grown gate oxide in 4H-SiC. The gate oxide was prepared by dry oxidation with wet reoxidation. The BC region was formed by nitrogen ion implantation at room temperature followed by annealing at 1500 ° C. The optimum doping depth of the BC region has been investigated. For the nitrogen concentration of 1 × 1017 cm-3 , the optimum depth was found to be 0.2μm. Under this condition, the channel mobility of 140 cm2/Vs was achieved with the threshold voltage of 0.3 V. This channel mobility is the highest reported so far for a normally-off 4H-SiC MOSFET with a thermally grown gate oxide.

Publication metadata

Author(s): Harada S, Suzuki S, Senzaki J, Kosugi R, Adachi K, Fukuda K, Arai K

Publication type: Article

Publication status: Published

Journal: IEEE Electron Device Letters

Year: 2001

Volume: 22

Issue: 6

Pages: 272-274

ISSN (print): 0741-3106

ISSN (electronic): 1558-0563

Publisher: IEEE

URL: http://dx.doi.org/10.1109/55.924839

DOI: 10.1109/55.924839

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