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Lookup NU author(s): Kazuhiro Adachi
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We have fabricated buried channel (BC) MOSFETs with a thermally grown gate oxide in 4H-SiC. The gate oxide was prepared by dry oxidation with wet reoxidation. The BC region was formed by nitrogen ion implantation at room temperature followed by annealing at 1500 ° C. The optimum doping depth of the BC region has been investigated. For the nitrogen concentration of 1 × 1017 cm-3 , the optimum depth was found to be 0.2μm. Under this condition, the channel mobility of 140 cm2/Vs was achieved with the threshold voltage of 0.3 V. This channel mobility is the highest reported so far for a normally-off 4H-SiC MOSFET with a thermally grown gate oxide.
Author(s): Harada S, Suzuki S, Senzaki J, Kosugi R, Adachi K, Fukuda K, Arai K
Publication type: Article
Publication status: Published
Journal: IEEE Electron Device Letters
Year: 2001
Volume: 22
Issue: 6
Pages: 272-274
ISSN (print): 0741-3106
ISSN (electronic): 1558-0563
Publisher: IEEE
URL: http://dx.doi.org/10.1109/55.924839
DOI: 10.1109/55.924839
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