ePrints

Double implanted power MESFET technology in 4H-SiC

Lookup NU author(s): Dr Alton Horsfall, Dr Sylvie Ortolland, Professor Nick Wright, Dr Christopher Johnson

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

A MESFET structure has been used to determine the preferred annealing strategy for depletion mode devices in SiC. Based on Boron and Nitrogen implantation the device removes the need for multi-epitaxial layer growth. It is shown that the annealing strategy for the implants has a strong influence on the electrical characteristics of the device, and the adopted two step anneal technique increases the current density of the device by increasing the mobility of the carriers by an order of magnitude. Further, the reduction in temperature of the channel anneal step has reduced the surface roughness of the device to that of the unimplanted wafer. This decrease in the surface roughness gives a lower leakage current through the gate contact of the device, allowing a higher gate bias to be used.

Publication metadata

Author(s): Wright NG; Ortolland S; Horsfall AB; Johnson CM; Knights AP

Publication type: Article

Publication status: Published

Journal: Materials Science Forum

Year: 2001

Volume: 353-356

Pages: 707-710

Print publication date: 01/01/2001

ISSN (print): 0255-5476

ISSN (electronic):

Publisher: Trans Tech Publications

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.707

DOI: 10.4028/www.scientific.net/MSF.353-356.707

Altmetrics

Share