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Step bunching fabrication constraints in silicon carbide

Lookup NU author(s): Dr Gordon Phelps, Professor Nick Wright, Dr Graeme Chester, Dr Christopher Johnson, Professor Anthony O'Neill

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Abstract

Experimental evidence is given for a newly observed surface morphological phenomenon (step bunch bleed) and its implications for device fabrication constraints in ion implanted 4H-silicon carbide (4H-SiC) are discussed. Step bunch bleed is the result of surface step bunching spreading during a high-temperature anneal process to bridge closely adjacent patterned lithographic features where step bunching would otherwise not occur. It is found that the phenomenon of step bunch bleed could limit the minimum practical lithographic distance between adjacent nitrogen implants within a boron well structure in 4H-SiC to the order of 1 μm - depending on the crystallographic orientation of the implant pattern.


Publication metadata

Author(s): Phelps GJ, Wright NG, Chester EG, Johnson CM, O'Neill AG

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2002

Volume: 17

Issue: 5

Pages: L17-L21

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0268-1242/17/5/102

DOI: 10.1088/0268-1242/17/5/102


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