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Lookup NU author(s): Dr Nebojsa Jankovic Professor,
Professor Anthony O'Neill
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We have investigated the influence of strained-Si cap layers on n-p-n heterojunction bipolar transistors (HBTs) fabricated on virtual substrates. Using an approximate theoretical model, it is found that the presence of a strained-Si/SiGe (relaxed) heterojunction barrier in the emitter can substantially improve the HBT's current gain, relaxing the need for a high Ge content in the strained base. Furthermore, two-dimensional numerical simulations of a virtual substrate HBT with a realistic geometry demonstrate that, besides the current gain enhancement, a three times improvement f t and fmax can be realized when a strained-Si/SiGe emitter is incorporated.
Author(s): Jankovic ND, O'Neill A
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd
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