Toggle Main Menu Toggle Search

Open Access padlockePrints

Enhanced performance virtual substrate heterojunction bipolar transistor using strained-Si/SiGe emitter

Lookup NU author(s): Dr Nebojsa Jankovic Professor, Professor Anthony O'Neill

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

We have investigated the influence of strained-Si cap layers on n-p-n heterojunction bipolar transistors (HBTs) fabricated on virtual substrates. Using an approximate theoretical model, it is found that the presence of a strained-Si/SiGe (relaxed) heterojunction barrier in the emitter can substantially improve the HBT's current gain, relaxing the need for a high Ge content in the strained base. Furthermore, two-dimensional numerical simulations of a virtual substrate HBT with a realistic geometry demonstrate that, besides the current gain enhancement, a three times improvement f t and fmax can be realized when a strained-Si/SiGe emitter is incorporated.


Publication metadata

Author(s): Jankovic ND, O'Neill A

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2003

Volume: 18

Issue: 9

Pages: 901-906

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd

URL: http://dx.doi.org/10.1088/0268-1242/18/9/315

DOI: 10.1088/0268-1242/18/9/315


Altmetrics

Altmetrics provided by Altmetric


Share