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Enhanced performance virtual substrate heterojunction bipolar transistor using strained-Si/SiGe emitter

Lookup NU author(s): Dr Nebojsa Jankovic Professor, Professor Anthony O'Neill

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Abstract

We have investigated the influence of strained-Si cap layers on n-p-n heterojunction bipolar transistors (HBTs) fabricated on virtual substrates. Using an approximate theoretical model, it is found that the presence of a strained-Si/SiGe (relaxed) heterojunction barrier in the emitter can substantially improve the HBT's current gain, relaxing the need for a high Ge content in the strained base. Furthermore, two-dimensional numerical simulations of a virtual substrate HBT with a realistic geometry demonstrate that, besides the current gain enhancement, a three times improvement f t and fmax can be realized when a strained-Si/SiGe emitter is incorporated.

Publication metadata

Author(s): Jankovic ND, O'Neill A

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2003

Volume: 18

Issue: 9

Pages: 901-906

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd

URL: http://dx.doi.org/10.1088/0268-1242/18/9/315

DOI: 10.1088/0268-1242/18/9/315

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