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Reactive ion etching of silicon carbide with patterned boron implantation

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Dr John Hedley, Dr Alton Horsfall, Dr Christopher Johnson, Professor Nick Wright


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Dependence of 4H-SiC etch rate in SF6 containing plasmas on the bulk concentration of implanted Boron as well as on post implantation regimes was investigated. The samples were selectively ion doped up to Boron bulk concentration of 1.1019cm-3 and annealed under Ar flow at temperatures of 1500 and 1600°C for varying durations. The difference up to 15% in etch rate of Boron doped and undoped 4H-SiC has been observed. It was found that this etch rate difference decreases with increasing of post implantation annealing time and with decreasing of Boron bulk concentration. It is assumed that this difference is defined by residual lattice damages induced during the implantation.

Publication metadata

Author(s): Vassilevski KV, Hedley J, Horsfall AB, Johnson CM, Wright NG

Editor(s): Roland Madar, Jean Camassel and Elisabeth Blanquet

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM 2003)

Year of Conference: 2004

Pages: 925-928

ISSN: 0255-5476

Publisher: Materials Science Forum: Trans Tech Publications Ltd


DOI: 10.4028/