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Low voltage silicon carbide zener diode

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD, Dr Alton Horsfall, Dr Christopher Johnson, Professor Nick Wright


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4H-SiC p+-n+ Zener diodes with a breakdown at voltage of 22 V have been fabricated and characterized in continuous and pulsed mode of operation at ambient temperatures of up to 200°C. The diodes were capable of operating at dc current densities up to 8 kA/cm2 and pulsed current densities up to 100 kA/cm2. They exhibited a value of isothermal dynamic impedance of less than 2.5 Ω at 200°C, a zero bias capacitance of 28 pF and mixed avalanche-tunnel breakdown with a positive temperature coefficient of breakdown voltage of about (8-10)·10 -5K-1.

Publication metadata

Author(s): Vassilevski KV, Zekentes K, Horsfall AB, Johnson CM, Wright NG

Editor(s): Madar, R., Camassel, J., Blanquet, E.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science Forum: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM)

Year of Conference: 2004

Pages: 1029-1032

ISSN: 0255-5476 (print) 1422-6375 (online)

Publisher: Trans Tech Publications Ltd


DOI: 10.4028/