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Gate dielectrics on strained-Si/SiGe heterolayers

Lookup NU author(s): Goutan Dalapati

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Abstract

The purpose of this article is to report on the recent developments on the gate dielectric formation on strained-Si/SiGe heterolayers. In the first part, growth of a high quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer and SiGe-free strained-Si on Silicon-on-Insulator (SSOI) is briefly reviewed. Characterization results of strained-Si films using atomic force microscopy (AFM), transmission electron microscopy (TEM) and Raman spectroscopy are then presented. In the second part, the processing issues of gate dielectric formation on strained-Si films are critically examined and the thermal oxidation of strained-Si layers are discussed. Low thermal budget processing, such as rapid thermal oxidation (RTO) and low temperature microwave plasma oxidation and nitridation of strained-Si layers are discussed in the third part. Microwave plasma deposition of various high-k gate dielectrics, such as ZrO2, Ta2O5, and TiO2 on strained-Si, their electrical properties and the current conduction mechanisms are also discussed. © 2004 Elsevier Ltd. All rights reserved.

Publication metadata

Author(s): Maiti CK, Samanta SK, Chatterjee S, Dalapati GK, Bera LK

Publication type: Article

Publication status: Published

Journal: Solid-State Electronics

Year: 2004

Volume: 48

Issue: 8

Pages: 1369-1389

ISSN (print): 0038-1101

ISSN (electronic): 1879-2405

Publisher: Pergamon

URL: http://dx.doi.org/10.1016/j.sse.2004.02.014

DOI: 10.1016/j.sse.2004.02.014

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