Publications by Goutan Dalapati - ePrints

Browsing publications by Goutan Dalapati.

Newcastle Authors	Title	Year
Liang Yan Dr Sarah Olsen Dr Mehdi Kanoun Rimoon Agaiby Goutan Dalapati et al.	Analysis of gate leakage characteristics in strained Si MOSFETs	2006
Dr Sarah Olsen Dr Mehdi Kanoun Mohamed Al-Areeki Rimoon Agaiby Goutan Dalapati et al.	Analysis of gate leakage in strained Si MOSFETs	2006
Liang Yan Dr Sarah Olsen Dr Mehdi Kanoun Rimoon Agaiby Goutan Dalapati et al.	Analysis of Gate Leakage in Strained Si MOSFETs	2006
Dr Yuk Tsang Dr Sanatan Chattopadhyay Dr Kelvin Kwa Goutan Dalapati Rouzet Agaiby et al.	Analytical model for threshold voltage of p-MOSFET in strained-Si/SiGe dual channel architecture	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Luke Driscoll Professor Anthony O'Neill Dr Kelvin Kwa et al.	Extraction and modelling of strained-Si MOSFET parameters using small signal channel conductance method	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Luke Driscoll Professor Anthony O'Neill Dr Kelvin Kwa et al.	Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method	2006
Goutan Dalapati Dr Kelvin Kwa Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	Impact of strained Si thickness and Ge our diffusion on strained-Si/SiO2 interface quality for surface channel strained Si n-MOSFET devices	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen Dr Yuk Tsang et al.	Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs	2006
Goutan Dalapati	Leakage current characteristics and the energy band diagram of Al/ZrO 2/Si0.3Ge0.7 hetero-MIS structures	2006
Goutan Dalapati Dr Sanatan Chattopadhyay Dr Yuriy Butenko Professor Lidija Siller	Rapid thermal oxidation of Ge-rich Si_1-xGe_x heterolayers	2006
Goutan Dalapati Dr Kelvin Kwa Dr Sarah Olsen Dr Sanatan Chattopadhyay Professor Anthony O'Neill et al.	Thermal oxidation of strained-Si: impact of strained-Si thickness and Ge on Si/SiO2 interface	2006
Arup Saha Dr Sanatan Chattopadhyay Goutan Dalapati	An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode	2005
Arup Saha Dr Sanatan Chattopadhyay Goutan Dalapati	Effect of annealing on interface state density of Ni-silicided/Si _1-xGe_x Schottky diode	2005
Dr Kelvin Kwa Dr Sarah Olsen Professor Anthony O'Neill Dr Sanatan Chattopadhyay Goutan Dalapati et al.	Fowler-Nordheim tunnelling in strained Si/SiGe MOS devices: impact of cross-hatching and nanoscale roughness	2005
Rudra Dhar Goutan Dalapati Dr Sanatan Chattopadhyay Dr Kelvin Kwa Dr Sarah Olsen et al.	Modelling of self-heating in strained Si n-channel MOSFETs on SiGe virtual substrates	2005
Arup Saha Dr Sanatan Chattopadhyay Goutan Dalapati	Electrical characterization of Niy(Si1-xGe x)1-y/Si1-xGex and NiSi/Si Schottky diodes	2004
Dr Sanatan Chattopadhyay Goutan Dalapati Arup Saha	Electrical Properties of NiSi/strained-Si Schottky diodes	2004
Goutan Dalapati	Gate dielectrics on strained-Si/SiGe heterolayers	2004