Toggle Main Menu Toggle Search

Open Access padlockePrints

Ultrashallow junction formation and gate activation in deep-submicron CMOS

Lookup NU author(s): Professor Nick Cowern


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


This paper addresses the optimization of ion implantation and rapid thermal annealing for the fabrication of shallow junctions and the activation of polycrystalline silicon gates in deepsubmicron CMOS transistors. Achieving ultrashallow, low-resistance junctions was studied by combining low-energy B and As implantation with spike annealing. In addition, experiments using B doping marker superlattices were performed to identify the critical physical effectsunderlying dopant activation and diffusion. The combination of high ramp rates (~100 oC/s) and ~1 s cycles at temperatures as high as 1100 °C can be used to improve dopant activation without inducing significant thermal diffusion after TED has completed. MOS capacitors were used to identify the implantation and annealing conditions needed for adequate activation of the gate electrode. In comparison to the conventional recrystallized amorphous Si gates, it was found that fine-grained poly-Si allows for the use of lower processing temperatures or shorter annealingtimes while improving the gate activation level. The fine-grained crystal structure enhances the de-activation of B dopants in PMOS gates during the thermal treatments following gate activation. Yet, the resulting dopant loss stays within acceptable limits as verified by excellent 0.18 μm device performance. The feasibility of spike annealing and poly-Si gate materials for 100-nm technology was proven by full integration using gate lengths down to 80 n

Publication metadata

Author(s): Stolk PA, Cubaynes FN, Meyssen VMH, Mannino G, Cowern NEB, van Zijl JP, Roozeboom F, Verhoeven JFC, van Berkum JGM, van de Wijgert WM, Schmitz J, Tuinhout HP, Woerlee PH

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Symposium B - Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions II.

Year of Conference: 2000

Pages: B3.1.1-12


DOI: 10.1557/PROC-610-B3.1

Series Title: Materials Research Society Proceedings