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4H-SiC pin diodes for microwave applications

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD


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4H-SiC p-i-n diodes were designed, fabricated and characterized with the aim to be used for microwave applications. The best diodes with mesa structure diameters between 80 and 150μm, exhibited a blocking voltage of 1100 V, a 100mA differential resistance of 1-2 Ω, a capacitance below 0.5pF at punchthrough voltage of 100 V and carrier effective lifetime between 15-27 ns. X-band microwave switches based on 4H-SiC p-i-n diodes are demonstrated for the first time. The switches exhibited insertion losses as low as 0.7 dB, isolation up to 25 dB and operation in pulsed high microwave powers of 2.2 kW in isolation mode and 0.4 kW in insertion mode. © 2005 IEEE.

Publication metadata

Author(s): Zekentes K, Camara N, Romanov L, Kirillov A, Boltovets MS, Lebedev A, Vassilevski KV

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Proceedings of the International Semiconductor Conference, CAS

Year of Conference: 2005

Pages: 17-25

Publisher: IEEE


DOI: 10.1109/SMICND.2005.1558702

Library holdings: Search Newcastle University Library for this item

ISBN: 0780392140