Toggle Main Menu Toggle Search

Open Access padlockePrints

Silicon carbide diodes for microwave applications

Lookup NU author(s): Dr Konstantin VasilevskiyORCiD


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Silicon carbide (SiC) offers significant advantages for microwave high power devises due to its unique electrical and thermal properties. This review presents a summary of the current position in the development of silicon carbide diodes operating at microwave frequencies: varactors, Schottky barrier mixer diodes, p-i-n and IMPATT diodes. Simplified theory of device operation is given for each kind of microwave diodes to derive the figures of merit, to estimate the potential silicon carbide performance for fabrication of these diodes and to compare SiC with conventional semiconductors. These analyses are followed by description of diode design, fabrication and measured characteristics. © World Scientific Publishing Company.

Publication metadata

Author(s): Vassilevski K

Publication type: Review

Publication status: Published

Journal: International Journal of High Speed Electronics and Systems

Year: 2005

Volume: 15

Issue: 4

Pages: 899-930

ISSN (print): 0129-1564

ISSN (electronic): 1793-6438


DOI: 10.1142/S0129156405003454