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Characteristics of ZrO₂ gate dielectrics on O₂- and N₂O-plasma treated partially strain-compensated Si _0.69Ge_0.3C_0.01 layers

Lookup NU author(s): Dr Rajat Mahapatra

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Abstract

The characteristics of ZrO2 gate dielectric along with the interfacial layer on O2- and N2O-plasma treated partially strain-compensated Si0.69Ge0.3C0.01/Si heterostructures have been investigated using spectroscopic and electrical measurements. Time-of-flight secondary ion mass spectroscopy and x-ray photoelectron spectroscopy analyses show the formation of an oxygen or nitrogen rich Zr-germanosilicate interfacial layer between the deposited ZrO2 and SiGeC films. The electrical and charge trapping properties under a constant current stressing have been studied using a metal-oxide-semiconductor structure. The N2O-plasma treated SiGeC film has a higher effective dielectric constant (k ~ 14) than that of the O2-plasma treated (k~ 12) films. The equivalent areal densities of charge defects, Neq (cm -2), are found to be ∼ 1.8 × 1012 and ∼6 × 1011 cm-2 for O2- and N 2O-plasma treated films, respectively. Considerably less trapped charges in the N2O-treated gate dielectric stack under constant current stressing make it highly attractive for SiGeC based scaled metal-oxide-semiconductor device applications. © 2006 American Institute of Physics.

Publication metadata

Author(s): Mahapatra R, Maikap S, Lee J-H, Ray SK

Publication type: Article

Publication status: Published

Journal: Journal of Applied Physics

Year: 2006

Volume: 100

Issue: 3

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2227269

DOI: 10.1063/1.2227269

Notes: Article no. 034105 6 pages

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