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Leakage current characteristics and the energy band diagram of Al/ZrO 2/Si0.3Ge0.7 hetero-MIS structures

Lookup NU author(s): Goutan Dalapati


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Zirconium oxide (ZrO2) films have been deposited on Ge-rich SiGe heterolayers at 150 °C by the microwave plasma enhanced chemical vapour deposition (PECVD) technique using zirconium tetra-tert-butoxide. The possible conduction mechanisms in deposited ZrO2 films have been investigated at both room and high temperature. It is found that the conduction mechanism is dominated by Schottky emission at a low electric field (E < 1.2 MV cm -1). The intrinsic barrier height between Al and ZrO2 was found to be 0.83 eV. The trap-assisted Poole-Frenkel conduction mechanism is found to take place at a relatively high electric field (E > 1.2 MV cm -1). The extracted trap energy is about 0.78 eV from the conduction band of ZrO2. It is shown that the current in ZrO2 films exhibits strong temperature dependence at a low electric field. The trapping behaviour of the charge carriers in thin ZrO2 gate dielectric stacks during constant gate voltage stress of metal-oxide-semiconductor capacitors has also been investigated. © 2006 IOP Publishing Ltd.

Publication metadata

Author(s): Chakraborty S, Bera MK, Dalapati GK, Paramanik D, Varma S, Bose PK, Bhattacharya S, Maiti CK

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2006

Volume: 21

Issue: 4

Pages: 467-472

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd.


DOI: 10.1088/0268-1242/21/4/009


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