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Understanding, Modeling and Optimizing Vacancy Engineering for Stable Highly Boron-Doped Ultrashallow Junctions

Lookup NU author(s): Professor Nick Cowern


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Publication metadata

Author(s): Cowern NEB, Smith AJ, Colombeau B, Gwilliam R, Sealy BJ, Collart EJH

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: IEEE International Electron Devices Meeting IEDM Technical Digest

Year of Conference: 2005

Pages: 4

Publisher: IEEE


DOI: 10.1109/IEDM.2005.1609523

Notes: The paper presented a breakthrough in the use of 'vacancy engineering' to make highly activated ultrashallow junctions, exceeding doping levels in previously patented approaches by an order of magnitude. It was the highest rated paper in its session and opened the session. IEDM (the International Electron Device Meeting) is the highly selective world-premier conference on device engineering. Content of paper patent protected. Led to cooperation with Chartered Semiconductor on device engineering, and a joint development project with TSMC (world's leading silicon foundry) on Technology CAD. One of four IEDM papers since 2001 - 3 contributed and one invited.

Library holdings: Search Newcastle University Library for this item

ISBN: 078039268X