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Electrical properties of ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructures

Lookup NU author(s): Dr Rajat Mahapatra

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Abstract

Ultrathin HfO2 gate dielectrics have been deposited on strained Si0.69Ge0.3C0.01 layers by rf magnetron sputtering. The polycrystalline HfO2 film with a physical thickness of ∼6.5 nm and an amorphous interfacial layer with a physical thickness of ∼2.5 nm have been observed by high resolution transmission electron microscopy (HRTEM). The electrical properties have been studied using metal-oxide-semiconductor (MOS) structures. The fabricated MOS capacitors on Si0.69 Ge0.3C0.01 show an equivalent oxide thickness (EOT) of 2.9 nm, with a low leakage current density of ∼4.5 × 10 - 7 A/cm2 at a gate voltage of -1.0 V. The fixed oxide charge and interface state densities are calculated to be 1.9 × 1012 cm- 2 and 3.3 × 10 11 cm- 2eV-1, respectively. The temperature dependent gate leakage characteristics has been studied to establish the current transport mechanism in high-k HfO2 gate dielectric to be Poole-Frenkel one. An improvement in electrical properties of HfO2 gate dielectrics has been observed after post deposition annealing in O2 and N2 environments. © Springer Science + Business Media, LLC 2006.


Publication metadata

Author(s): Mahapatra R, Maikap S, Ray SK

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Journal of Electroceramics, Special Issue: Symposium on Functional Ceramic Materials and Thin Films of ICMAT 2005

Year of Conference: 2006

Pages: 545-548

ISSN: 1385-3449

Publisher: Springer New York LLC

URL: http://dx.doi.org/10.1007/s10832-006-9915-z

DOI: 10.1007/s10832-006-9915-z

Library holdings: Search Newcastle University Library for this item

ISBN: 15738663


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