Browse by author
Lookup NU author(s): Dr Rajat Mahapatra
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Ultrathin HfO2 gate dielectrics have been deposited on strained Si0.69Ge0.3C0.01 layers by rf magnetron sputtering. The polycrystalline HfO2 film with a physical thickness of ∼6.5 nm and an amorphous interfacial layer with a physical thickness of ∼2.5 nm have been observed by high resolution transmission electron microscopy (HRTEM). The electrical properties have been studied using metal-oxide-semiconductor (MOS) structures. The fabricated MOS capacitors on Si0.69 Ge0.3C0.01 show an equivalent oxide thickness (EOT) of 2.9 nm, with a low leakage current density of ∼4.5 × 10 - 7 A/cm2 at a gate voltage of -1.0 V. The fixed oxide charge and interface state densities are calculated to be 1.9 × 1012 cm- 2 and 3.3 × 10 11 cm- 2eV-1, respectively. The temperature dependent gate leakage characteristics has been studied to establish the current transport mechanism in high-k HfO2 gate dielectric to be Poole-Frenkel one. An improvement in electrical properties of HfO2 gate dielectrics has been observed after post deposition annealing in O2 and N2 environments. © Springer Science + Business Media, LLC 2006.
Author(s): Mahapatra R, Maikap S, Ray SK
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Journal of Electroceramics, Special Issue: Symposium on Functional Ceramic Materials and Thin Films of ICMAT 2005
Year of Conference: 2006
Pages: 545-548
ISSN: 1385-3449
Publisher: Springer New York LLC
URL: http://dx.doi.org/10.1007/s10832-006-9915-z
DOI: 10.1007/s10832-006-9915-z
Library holdings: Search Newcastle University Library for this item
ISBN: 15738663
