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Lookup NU author(s): Dr Suresh Uppal
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We report an experimental and simulation study for introducing Boron ions into high Ge content relaxed SiGe layers and into Ge wafers. The successful calibration of our Monte Carlo ion implantation simulator for this wide class of materials is demonstrated by comparing the predicted Boron profiles with SIMS data. The larger nuclear and electronic stopping power of the Ge atom is responsible for the trend to shallower profiles with increasing Ge content in SiGe alloys. The generated point defects are estimated by using a modified Kinchin-Pease model. We found that the higher displacement energy in Ge, the stronger backscattering effect, and the smaller energy transfer from the ion to the primary recoil of a collision cascade are mainly responsible for the significantly reduced damage in Ge. Finally the point responses in Si and Ge are presented and the Boron distributions are discussed. copyright The Electrochemical Society.
Author(s): Wittmann R, Uppal S, Hossinger A, Cervenka J, Selberherr S
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: ECS Transactions: 210th ECS Meeting
Year of Conference: 2006
Pages: 667-676
ISSN: 1938-5862
Publisher: Electrochemical Society, Inc.
URL: http://dx.doi.org/10.1149/1.2355862
DOI: 10.1149/1.2355862
Library holdings: Search Newcastle University Library for this item
ISBN: 19386737
