Browse by author
Lookup NU author(s): Dr Nebojsa Jankovic Professor,
Professor Anthony O'Neill
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
In this paper, a new model of surface-channel strained-Si/SiGe NMOSFETs is derived based on the extension of non-quasi-static (NQS) circuit model developed previously for bulk-Si devices. Basic equations of the NQS MOS model have been modified to account for new physical parameters of strained-Si and relaxed-SiGe layers. In addition, the device steady-state self-heating is efficiently included without employing the thermal-flow analog auxiliary sub-circuits. From the comparisons of modelling results with numerical simulations and measurements, it is shown that a modified NQS MOS including steady-state self-heating can accurately predict the DC characteristics of strained-Si/SiGe NMOSFETs. © 2006 Elsevier Ltd. All rights reserved.
Author(s): Jankovic ND, Pesic TV, O'Neill A
Publication type: Article
Publication status: Published
Journal: Solid-State Electronics
Print publication date: 01/03/2006
ISSN (print): 0038-1101
ISSN (electronic): 1879-2405
Altmetrics provided by Altmetric