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Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

Lookup NU author(s): Professor Nick Cowern

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Abstract

Preamorphization of ultrashallow implanted boron in silicon on insulator is optimized to produce an abrupt boxlike doping profile with negligible electrical deactivation and significantly reduced transient enhanced diffusion. The effect is achieved by positioning the as-implanted amorphous/crystalline interface close to the buried oxide interface to minimize interstitials while leaving a single-crystal seed to support solid-phase epitaxy. Results support the idea that the interface between the Si overlayer and the buried oxide is an efficient interstitial sink. © 2007 American Institute of Physics.

Publication metadata

Author(s): Hamilton JJ, Kirkby KJ, Cowern NEB, Collart EJH, Bersani M, Giubertoni D, Gennaro S, Parisini A

Publication type: Article

Publication status: Published

Journal: Applied Physics Letters

Year: 2007

Volume: 91

Issue: 9

Pages: -

Print publication date: 01/01/2007

ISSN (print): 0003-6951

ISSN (electronic): 1077-3118

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2778749

DOI: 10.1063/1.2778749

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