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Temperature stability of heteropolytypic 6H/3C FETs

Lookup NU author(s): Chia-Ching Chen, Dr Alton Horsfall, Professor Nick Wright, Dr Konstantin VasilevskiyORCiD


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The formation of two-dimensional electron gases (2DEG) at the polytypic 6H/3C heterojunction is investigated. The main of study was to obtain the properties of the 3C/6H structure using Technology Computer Aided Design (TCAD) software. The electron-density distribution and conduction band profile in 6H/3C SiC heterojunction are calculated as a function of temperature. Simulation of these hetero-junctions has concentrated on the I-V behaviour over a range of temperatures between 350 and 650 K. We show that the device characteristics are substantially degraded at high temperatures and this will limit the use of these devices to moderate temperature applications.

Publication metadata

Author(s): Chen CC, Horsfall AB, Wright NG, Vassilevski K

Editor(s): Wright, N; Johnson, CM; Vassilevski, K; Nikitina, I; Horsfall, A

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006)

Year of Conference: 2007

Pages: 843-846

ISSN: 0255-5476 (print) 0255-5476 (online)

Publisher: Materials Science Forum: Trans Tech Publications Ltd


DOI: 10.4028/

Notes: Silicon Carbide and Related Materials 2006

Library holdings: Search Newcastle University Library for this item

ISBN: 9780878494422